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cha4220-98f ref. : dscha42203347 - 13 dec 13 1/18 specifications subject to change without notic e united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 0.5-20ghz driver gaas monolithic microwave ic description the cha4220-98f is a distributed driver amplifier which operates between 0.5 and 20ghz. it is designed for a wide range of applications, such as military, telecom, test instrumentation. the circuit is manufactured with a phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is supplied as bare die part with rf accesses matched on 50 ohms. main features broadband performances: 0.5-20ghz typical linear gain: 17db op1db: 20dbm psat: 23dbm oip3: 28dbm typical noise figure: 3.5db dc bias: vd=7v@id=120ma, vg1#-0.2v and vg2=1.5v. bare die die size: 3.04 x 1.56 x 0.1mm main electrical characteristics tamb.= +25c symbol parameter min typ max unit freq frequency range 0.5 20 ghz gain linear gain 17 db nf noise figure 3.5 db pout output power @1db comp. 20 dbm 5 1 2 3 4 8 7 6 vg1 acg4 acg3 acg2 acg1 vg2 in out -30 -25 -20 -15 -10 -5 0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20 22 linear gain / rl / nf (db) frequency (ghz) linear gain, return losses, nf vs. frequency s11(db) s21(db) s22(db) nf(db)
cha4220-98f 0.5-20ghz driver ref. : dscha42203347 - 13 dec 13 2/18 specification s subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb.= +25c,vg1 to be set in order to have idq=120 ma, vg2=1.5v symbol parameter min typ max unit freq frequency range 0.5 20 ghz gain linear gain 17 db nf noise figure 3.5 db irl input return loss 15 db orl output return loss 18 db p1db output power for 1db compression for freq=2-20 ghz 20 dbm psat saturated output power for freq=2-20 ghz 23 dbm oip3 output third order intercept for freq=2-20 ghz 28 dbm idq quiescent current on vd 120 ma vd supply voltage on vd 6 6.5 7 v id drain current @3db gain compression 140 ma pin_max maximum input power for vd=6v for vd=7v 17 15 dbm dbm the values are representative of typical test fixt ure measurements as defined on the drawing in paragraph evaluation test fixture. typical bias conditions tamb.= +25c symbol pad n o parameter values unit vg1 8 gate control1 for the amplifier -0.2/-0.4 v vg2 2 gate control2 for the amplifier 1.5 v vd 5 drain voltage 7 v the associated drain current with no rf input power is idq=120ma this typical bias is recommended in order to get th e best compromise between output power, linearity and noise figure performance vs. temperat ure.
0.5-20ghz driver cha4220-98f ref. : dscha42203347 - 13 dec 13 3/18 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 absolute maximum ratings (1) tamb.= +25c symbol parameter values unit vd drain bias voltage 8v v idq drain bias current 170 ma vg1 gate bias voltage vg1 -2 to 0 v vg2 gate bias voltage vg2 1 to 2 v pin maximum peak input power overdrive 17 dbm ta operating temperature range (chip backside) -40 to 85 c tstg storage temperature range -55 to +150 c (1) operation of this device above anyone of these par ameters may cause permanent damage: these maximum ratings parameters could not be cumulated. these are stress ratings only, and functional opera tion of the device at these conditions is not implied. maximum junction temperature=175c with ta=+85c. rth_equivalent =72c/w chips equivalent thermal resistance from channel to die bottom with ta. = +85c and 7v & idq=120ma. the rth_equivalent is extrapolated, taking into acc ount the full dc power and the channel temperature increase on the worst transistor.
cha4220-98f 0.5-20ghz driver ref. : dscha42203347 - 13 dec 13 4/18 specification s subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical jig measurements tamb.= +25c, vd=7v, vg1 set in order to get idq =1 20ma linear gain versus vg2 voltage input return loss versus vg2 voltage 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 22 linear gain (db) frequency (ghz) vg2=1v vg2=1.5v vg2=2v -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 s11(db) frequency (ghz) vg2=1v vg2=1.5v vg2=2v
0.5-20ghz driver cha4220-98f ref. : dscha42203347 - 13 dec 13 5/18 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical jig measurements tamb.= +25c, vd =7v, vg1 set in order to get idq = 120ma output return loss versus vg2 voltage linear gain versus vd voltage (idq=120ma) -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 s22 (db) frequency (ghz) vg2=1v vg2=1.5v vg2=2v 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 22 linear gain (db) frequency (ghz) vd=6v vd=6.5v vd=7v
cha4220-98f 0.5-20ghz driver ref. : dscha42203347 - 13 dec 13 6/18 specification s subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical jig measurements tamb.= +25c, +85c,-40c, vd =7v, vg1 set in order to get idq =120ma, vg2=1.5v vg1 and vg2 remain constant versus temperature. linear gain vs temperature input return loss vs temperature 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 22 linear gain (db) frequency (ghz) -40 c 25 c +85 c -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 s11 (db) frequency (ghz) -40 c 25 c +85 c
0.5-20ghz driver cha4220-98f ref. : dscha42203347 - 13 dec 13 7/18 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical jig measurements temperature.= +25c,+85c,-40c, vd =7v, vg1 set in order to get idq =120ma, vg2=1.5v vg1 and vg2 remain constant versus temperature. output return loss vs temperature noise figure vs temperature -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 22 s22 (db) frequency (ghz) -40 c 25 c +85 c 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20 22 noise figure (db) frequency (ghz) -40 c 25 c +85 c
cha4220-98f 0.5-20ghz driver ref. : dscha42203347 - 13 dec 13 8/18 specification s subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical jig measurements tamb= +25c, vd =7v, vg1 set in order to get idq =1 20ma, vg2=1.5v output power vs. frequency and gain compression lev el power added efficiency vs. frequency and gain compr ession level 0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20 pout (dbm) frequency (ghz) @1db gain compression @2db gain compression @3db gain compression 0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20 pae (%) frequency (ghz) @1db gain compression @2db gain compression @3db gain compression
0.5-20ghz driver cha4220-98f ref. : dscha42203347 - 13 dec 13 9/18 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical jig measurements tamb.= +25c, vd =7v, vg1 set in order to get idq = 120ma, vg2=1.5v drain current vs. frequency and gain compression le vel 0.05 0.06 0.07 0.08 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.2 2 4 6 8 10 12 14 16 18 20 id a) frequency (ghz) @1db gain compression @2db gain compression @3db gain compression
cha4220-98f 0.5-20ghz driver ref. : dscha42203347 - 13 dec 13 10/18 specificatio ns subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical jig measurements tamb.= +25c, vg1 set in order to get idq =120ma, v g2=1.5v output power @1db gain compression vs. vd saturated output power vs. vd 0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20 op1db (dbm) frequency (ghz) vd=6v vd=7v 0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20 psat (dbm) frequency (ghz) vd=6v vd=7v
0.5-20ghz driver cha4220-98f ref. : dscha42203347 - 13 dec 13 11/18 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical jig measurements temperature.= +25c,+85c,-40c, vd =7v, vg1 set in order to get idq =120ma, vg2=1.5v vg1 and vg2 remain constant versus temperature. saturated output power vs temperature output ip3 vs temperature 0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20 psat (dbm) frequency (ghz) -40 c 25 c +85 c 0 5 10 15 20 25 30 35 40 2 4 6 8 10 12 14 16 18 20 oip3 (dbm) frequency (ghz) -40 c 25 c +85 c
cha4220-98f 0.5-20ghz driver ref. : dscha42203347 - 13 dec 13 12/18 specificatio ns subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical jig measurements tamb.= +25c, vg1 set in order to get idq =120ma, v g2=1.5v output ip3 vs vd tamb.= +25c, vg1 set in order to get idq =120 ma, vd=6v output ip3 vs vg2 0 5 10 15 20 25 30 35 40 2 4 6 8 10 12 14 16 18 20 oip3 (dbm) frequency (ghz) vd=6v vd=7v 0 5 10 15 20 25 30 35 40 2 4 6 8 10 12 14 16 18 20 oip3 (dbm) frequency (ghz) vg2=1.75v vg2=1.5v vg2=1.25v
0.5-20ghz driver cha4220-98f ref. : dscha42203347 - 13 dec 13 13/18 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 mechanical data: outline drawing chip width and length are given with a tolerance of +/- 35m. chip thickness is 100m. all pads are 100 m x 100 m, except in and out pad s that are 200 x 120 m.
cha4220-98f 0.5-20ghz driver ref. : dscha42203347 - 13 dec 13 14/18 specificatio ns subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 pad reference pad number name description 1 in rfin is dc coupled and matched to 50 ohms 2 vg2 gate control 2 for amplifier: +1.5v should be appli ed for nominal operation. 3 acg1 low frequency termination (bypass capacitor see val ue next page). 4 acg2 low frequency termination (bypass capacitor see val ue next page). 5 out & vd rfout for amplifier (matched on 50 ohms) . vd voltage should be applied on this pad through a bias tee 6 acg3 low frequency termination (bypass capacitor see val ue next page). 7 acg4 low frequency termination (bypass capacitor see val ue next page). 8 vg1 gate control 2 for amplifier: about -0.2v die bottom gnd die bottom must be connected to rf/d c ground 5 1 2 3 4 8 7 6 vg1 acg4 acg3 acg2 acg1 vg2 in out
0.5-20ghz driver cha4220-98f ref. : dscha42203347 - 13 dec 13 15/18 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 assembly recommendations evaluation test fixture agc1 acg4 acg3 out vg1 in vg2 agc2 100 nf to vg1 power supply to vg2 power supply 100pf 10nf 10nf 100pf 1nf 0.47f 0.47f 1nf 50 ohms transmission line 50 ohms transmission line drain bias vd must be applied through a broadband bias tee vd rfout caution: rf_in pad is dc coupled external capacitor requested
cha4220-98f 0.5-20ghz driver ref. : dscha42203347 - 13 dec 13 16/18 specificatio ns subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 device operation device power up instructions: 1) ground the device 2) set vg1 to -2v 3) set vg2 to 1.5v (nominal value for vg2) 4) set vd to 7v (nominal value for vd) 5) set vg1 in the range of -0.2v for having idq=120 ma 6) apply rf input power device power down instructions: 1) remove rf input power 2) remove vd 3) remove vg2 4) remove vg1 dc schematic vd=7v, vg1=-0.2v, vg2=1.5v, idq=120ma cell 1 cell n rf out + vd rf in vg1 50 ohms vg2 300 ohms 150 ohms
0.5-20ghz driver cha4220-98f ref. : dscha42203347 - 13 dec 13 17/18 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 notes
cha4220-98f 0.5-20ghz driver ref. : dscha42203347 - 13 dec 13 18/18 specificatio ns subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon-sur-yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended environmental management ums products are compliant with the regulation in p articular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums-gaas.com . recommended esd management refer to the application note an0020 available at http://www.ums-gaas.com for esd sensitivity and handling recommendations for the um s package products. ordering information chip form: cha4220-98f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.

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